Silicon carbide gallium nitride

Silicon carbide refers to silicon carbide power devices, which are high-performance, highly reliable, and high power density semiconductor power devices. They are composed of pn junctions, MOSFETs, or BJTs (transistors) based on silicon carbide semiconductor materials and can be used in various power and electronic applications. Compared with traditional silicon power devices, silicon carbide power devices have lower conduction and turn off losses, higher operating temperatures and radiation resistance, as well as faster switching speeds.
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NumberPart-NOPackageVRRM[V](min)ID[A](25℃)VF[V](max)PD[W](25℃)IFSM[A](25℃)
104065GPDFN5X665041.876.526
206065GPDFN5X665061.755.560
310065A2TO-220-2650101.7138105
406065A2TO-220-265061.755.560



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